色播婷婷电影综合社区,AV女优不卡亚洲在线,99999AV,日韩人妻中文字幕视频,国产拍自偷,91人人妻,超碰在线81,免费福利视频一区,九草青草原在线看

China MOSFET Testing Equipment - China Supplier
China MOSFET Testing Equipment - China Supplier China MOSFET Testing Equipment - China Supplier China MOSFET Testing Equipment - China Supplier China MOSFET Testing Equipment - China Supplier China MOSFET Testing Equipment - China Supplier

MOSFET Testing Equipment

Price:1
Industry Category:
Product Category:
Brand: 華科智源
Spec:


Contact Info
  • Add:深圳市寶安區(qū)西鄉(xiāng)街道智慧創(chuàng)新中心, Zip: 518102
  • Contact: 陳先生
  • Tel:13008867918
  • Email:chensl@hustec.cn

Other Products

Description
Additional Information

HUSTECHuake Zhiyuan

IGBT Static Parameter Test System


I: Main Features of the Static Parameter Test System

Huake Zhiyuan's electrical parameter tester can be used for testing IGBTs in various package forms, as well as measuring the V-I characteristics of high-power diodes, IGBT modules, high-power IGBTs, high-power bipolar transistors, MOSFETs, and other devices. It tests various power devices up to 600A (expandable to 2000A) and 5000V, widely applied in industries such as rail transportation, electric vehicles, wind power generation, inverters, and welding machines for IGBT incoming material selection and failure analysis. The equipment can also be used for online maintenance in industries like inverters, wind power, rail transportation, and welding machines without the need to remove components from the circuit board for separate testing, enabling convenient online IGBT detection. The testing process is simple: parameters can be set directly in the test host for immediate testing, or automated testing can be performed via software-controlled host programming. Static parameter testing of IGBTs is completed through computer operation.

Static Parameter Test System Test Parameters:

ICES Collector-Emitter Leakage Current

IGESF Forward Gate Leakage Current

IGESR Reverse Gate Leakage Current

BVCES Collector-Emitter Breakdown Voltage

VGETH Gate-Emitter Threshold Voltage

VCESAT Collector-Emitter Saturation Voltage

ICON On-State Collector Current

VGEON On-State Gate Voltage

VF Diode Forward Voltage Drop

The entire testing process is automated. The computer software includes a database management and query function, and can generate test curves for ease of operation.

II: Application Scope of the Static Parameter Test System

A: IGBT discrete devices and modules

B: High-power MOSFETs

C: High-power diodes

D: Standard low-resistance resistors

E: Screening and online fault detection in industries such as rail transportation, wind power generation, new energy vehicles, inverters, and welding machines

III: Features of the Static Parameter Test System:

A: Measures various IGBTs and MOSFETs

B: Pulse current 1200A, voltage 5KV, wide testing range

C: Pulse width 50μS~300μS

D: Vce measurement accuracy 2mV

E: Vce measurement range >10V

F: Computer graphical display interface

G: Intelligent protection for measured devices

H: Host computer with database functionality

I: Measures internal diode voltage drop of MOSFET/IGBT

J: Tests all static parameters of IGBT in one go

Generates test curves (IV curves visually display IGBT characteristics, enabling failure analysis and fault localization)

L: Allows comparison of different curves to observe the curve status of products from the same batch or compare curves of the same specification parameters from different manufacturers

No.

Test Item

Description

Measurement Range

Resolution

Accuracy

1

VF

Diode Forward Voltage Drop

0~20V

1mV

±1%,±1mV

2

IF

Diode Forward Current

0~1200A

≤200A: 0.1A

≤200A: ±1%±0.1A

3

>200A: 1A

>200A: ±1%

4

Vces

Collector-Emitter Voltage

0~5000V

1V

±1%,±1V

5

Ic

On-State Collector Current

0~1200A

≤200A: 0.1A

≤200A: ±1%±0.1A

6

>200A: 1A

>200A: ±1%

7

Ices

Collector-Emitter Leakage Current

0~50mA

1nA

±1%,±10μA

8

Vgeth

Gate-Emitter Threshold Voltage

0~20V

1mV

±1%,±1mV

9

Vcesat

Collector-Emitter Saturation Voltage

0~20V

1mV

±1%,±1mV

10

Igesf

Forward Gate Leakage Current

0~10μA

1nA

±2%,±1nA

11

Igesr

Reverse Gate Leakage Current

12

Vges

Gate-Emitter Voltage

0~40V

1mV

±1%,±1mV

Huake Zhiyuan's Static Parameter Test System is an intelligent test system developed specifically for various static parameters of IGBTs. It features high automation (automatically operates according to the program set by the operator), records test results via computer, stores test results in text format, offers flexible testing methods (capable of testing discrete devices as well as single-unit and multi-unit modules), ensures safety and stability (real-time monitoring of equipment status with hardware interlocking), includes safety protection functions, and provides fast and convenient testing speed.

Industry Category
Product Category
Brand: 華科智源
Spec:
Stock:
Origin: China / Guangdong / Shenshi
About Toocle.com - Partner Programme - Old Version
Copyright ? Toocle.com. All Rights Reserved.
(浙)-經(jīng)營性-2023-0192
ChatGlobal Chat Now 马关县| 威海市| 巴东县| 定边县| 河池市| 漳州市| 崇仁县| 马边| 珲春市| 蕉岭县| 宝清县| 营山县| 盐边县| 息烽县| 旺苍县| 阿克苏市| 新河县| 天等县| 浦城县| 五常市| 呼和浩特市| 加查县| 丘北县| 准格尔旗| 融水| 武定县| 托克逊县| 托克托县| 巴彦县| 许昌市| 基隆市| 革吉县| 定日县| 桃江县| 甘德县| 于田县| 积石山| 台湾省| 吉水县| 嫩江县| 渝中区|