The high and low temperature vacuum chamber probe system is primarily used to provide a variable temperature measurement environment—either low or high temperature—for the chip under test, enabling the measurement and analysis of changes in the chip's performance parameters as temperature varies. The chip inside the chamber, being in a vacuum environment, effectively avoids test result errors caused by oxidation-prone semiconductor devices coming into contact with air.

Ultra-Low Temperature Testing:

When testing wafers in a low-temperature atmospheric environment, moisture in the air can condense on the wafer, leading to excessive leakage current or failure of the probe to make contact with the electrode, resulting in test failure. To prevent this, moisture in the vacuum chamber must be pumped out before testing, and the pump must remain operational throughout the entire testing process.

High-Temperature Oxidation-Free Testing:

When wafers are heated to 300°C, 400°C, 500°C, or even higher temperatures, oxidation becomes increasingly apparent and more severe at higher temperatures. Excessive oxidation can cause electrical errors in the wafer, as well as physical and mechanical deformation. To avoid these issues, oxygen in the vacuum chamber must be pumped out before testing, and the pump must remain operational throughout the entire testing process. During wafer testing, as the temperature alternates between low and high, thermal expansion and contraction cause relative displacement between the positioned probe and the device electrode. This necessitates repositioning of the probe holder, which is located outside the chamber, allowing adjustment of the probe to the ideal measurement position without compromising the vacuum. Alternatively, an automated probe holder controlled by a manipulator can be used to adjust the probe position.